PART |
Description |
Maker |
MP6901 |
4 A, 80 V, 6 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR Power Transistor Module Silicon Epitaxial Type (Darlington power transistor 6 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching High Power Switching Applications / Hammer Drive
|
TOSHIBA[Toshiba Semiconductor]
|
BUL741 |
The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching s High voltage fast-switching NPN Power Transistor
|
ST Microelectronics, Inc. STMicroelectronics
|
HAT1126R HAT1126R-EL-E HAT1126RJ HAT1126RJ-EL-E |
Transistors>Switching/MOSFETs Silicon P Channel Power MOS FET High Speed Power Switching P通道功率MOS FET的高速电源开
|
Renesas Electronics Corporation. Renesas Electronics, Corp.
|
GT15Q301 |
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) Silicon N-Channel IGBT for High Power Switching Application(用于大功率转换的N沟道绝缘栅双极型晶体
|
http:// TOSHIBA[Toshiba Semiconductor] Toshiba Corporation
|
MP4401 E002512 |
HIGH POWER, HIGH SPEED SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING From old datasheet system
|
Toshiba
|
MP4201 E002500 |
HIGH POWER, HIGH SPEED SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING From old datasheet system
|
Toshiba
|
MP4401 |
HIGH POWER, HIGH SPEED SWITCHING APPLICATIONS / HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING
|
Toshiba Semiconductor
|
MP441007 MP4410 |
High Power, High Speed Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching
|
Toshiba Semiconductor
|
2SA1776 2SA1727 2SA1812 A5800343 2SA18121 |
High-voltage Switching Transistor (Telephone power supply) High-voltage Switching Transistor (Telephone power supply) (-400V/ -0.5A) High-voltage Switching Transistor (Telephone power supply) (-400V, -0.5A) High-voltage Switching Transistor (Telephone power supply) (-400V -0.5A) From old datasheet system Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) High-voltage Switching Transistor ( 400V, 0.5A)
|
ROHM[Rohm]
|
MG75Q1JS40 E002405 |
Silicon N channel IGBT(N沟道绝缘栅双极型晶体 N通道IGBT的(不适用沟道绝缘栅双极型晶体管) N CHANNEL IGBT (HIGH POWER SWITCHING / CHOPPER APPLICATIONS) N CHANNEL IGBT (HIGH POWER SWITCHING CHOPPER APPLICATIONS) From old datasheet system N CHANNEL IGBT (HIGH POWER SWITCHING, CHOPPER APPLICATIONS)
|
Toshiba, Corp. TOSHIBA[Toshiba Semiconductor]
|
2N2222ADCSM |
High Speed Medium Power NPN Switching Transistor In Hermetic Cermic Surface Mount Package For High Reliability Application(高速、中等功率、开关型NPN晶体管(高可靠性、陶瓷表贴封装)) DUAL HIGH SPEED, MEDIUM POWER NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
|
TT electronics Semelab Limited SEME-LAB[Seme LAB]
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MP4303 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
|
TOSHIBA
|